화학공학소재연구정보센터
검색결과 : 25건
No. Article
1 Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates
Tseng PH, Hwu JG
Solid-State Electronics, 91, 100, 2014
2 Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide
Tseng PH, Hwu JG
Thin Solid Films, 556, 317, 2014
3 Investigation of the Two-State Current Conduction Mechanism in High-k/SiO2 Stacked Dielectric with High Bandgap 4H-SiC Substrate
Chiang JC, Hwu JG
Journal of the Electrochemical Society, 158(12), G237, 2011
4 Characterization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor Tunneling Temperature Sensors
Wang CY, Hwu JG
Journal of the Electrochemical Society, 157(10), J324, 2010
5 Metal-Oxide-Semiconductor Structure Solar Cell Prepared by Low-Temperature (< 400 degrees C) Anodization Technique
Wang CY, Hwu JG
Journal of the Electrochemical Society, 156(3), H181, 2009
6 Low Temperature Tandem Aluminum Oxides Prepared by DAC-ANO Compensation in Nitric Acid
Yang CY, Hwu JG
Journal of the Electrochemical Society, 156(11), G184, 2009
7 Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system
Wang CC, Li TH, Chuang KC, Hwu JG
Journal of the Electrochemical Society, 155(3), G61, 2008
8 Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization method
Chuang KC, Hwu JG
Journal of the Electrochemical Society, 155(8), G159, 2008
9 Comparison of saturation current characteristics for ultrathin silicon oxides grown on n- and p-type silicon substrates simultaneously
Wang TM, Chang CH, Chang SJ, Hwu JG
Journal of Vacuum Science & Technology A, 24(6), 2049, 2006
10 The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection
Huang CH, Hwu JG
Solid-State Electronics, 49(10), 1599, 2005