화학공학소재연구정보센터
검색결과 : 33건
No. Article
1 An X-ray chimney extending hundreds of parsecs above and below the Galactic Centre
Ponti G, Hofmann F, Churazov E, Morris MR, Haberl F, Nandra K, Terrier R, Clavel M, Goldwurm A
Nature, 567(7748), 347, 2019
2 The allosteric inhibitor ABL001 enables dual targeting of BCR-ABL1
Wylie AA, Schoepfer J, Jahnke W, Cowan-Jacob SW, Loo A, Furet P, Marzinzik AL, Pelle X, Donovan J, Zhu WJ, Buonamici S, Hassan AQ, Lombardo F, Iyer V, Palmer M, Berellini G, Dodd S, Thohan S, Bitter H, Branford S, Ross DM, Hughes TP, Petruzzelli L, Vanasse KG, Warmuth M, Hofmann F, Keen NJ, Sellers WR
Nature, 543(7647), 733, 2017
3 Inner-Shell Water Rearrangement Following Photoexcitation of Tris(2,2'-bipyridine)iron(II)
Das AK, Solomon RV, Hofmann F, Meuwly M
Journal of Physical Chemistry B, 120(1), 206, 2016
4 DISLOCATION NETWORKS Shedding coherent light on defects
Hofmann F
Nature Materials, 14(8), 756, 2015
5 Expression of cGMP-dependent protein kinase type I in mature white adipocytes
Leiss V, Illison J, Domes K, Hofmann F, Lukowski R
Biochemical and Biophysical Research Communications, 452(1), 151, 2014
6 CALIBRATION OF A GARDON SENSOR IN A HIGH-TEMPERATURE HIGH HEAT FLUX STAGNATION FACILITY
Stathopoulos P, Hofmann F, Rothenfluh T, von Rohr PR
Experimental Heat Transfer, 25(3), 222, 2012
7 Cluster analysis and completeness of crystal structure generation
Hofmann DWM, Kuleshova LN, Hofmann F, D'Aguanno B
Chemical Physics Letters, 475(1-3), 149, 2009
8 Influence of crystal orientation and body doping on trigate transistor performance
Landgraf E, Rosner W, Stadele M, Dreeskornfeld L, Hartwich J, Hofmann F, Kretz J, Lutz T, Luyken RJ, Schulz T, Specht M, Risch L
Solid-State Electronics, 50(1), 38, 2006
9 Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications
Specht M, Reisinger H, Hofmann F, Schulz T, Landgraf E, Luyken RJ, Rosner W, Grieb M, Risch L
Solid-State Electronics, 49(5), 716, 2005
10 NVM based on FinFET device structures
Hofmann F, Specht M, Dorda U, Kommling R, Dreeskornfeld L, Kretz J, Stadele M, Rosner W, Risch L
Solid-State Electronics, 49(11), 1799, 2005