1 |
Comparison of memory effect with voltage or current charging pulse bias in MIS structures based on codoped Si-NCs embedded in SiO2 or HfOx Mazurak A, Mroczynski R Solid-State Electronics, 159, 157, 2019 |
2 |
Improvement of the electrical and interfacial propertie of TiN/ZrO2 by a modulated atomic layer deposition process with controlled O-3 dosing Song H, Kim D, Kim Y, Jung H, Lim H, Lee S, Yong K Thin Solid Films, 675, 153, 2019 |
3 |
Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC Suvanam SS, Usman M, Martin D, Yazdi MG, Linnarsson M, Tempez A, Gotelid M, Hallen A Applied Surface Science, 433, 108, 2018 |
4 |
Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum Kim SB, Lee SH, Jung HJ, Seo MS, Kim SM, Lee S, Park JY, Park TJ, Jeong HY, Jun DH, Park KH, Park WK, Lee SW Thin Solid Films, 646, 173, 2018 |
5 |
In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth mode, interface reactions and energy band alignment Chen CP, Ong BL, Ong SW, Ong WJ, Tan HR, Chai JW, Zhang Z, Wang SJ, Pan JS, Harrison LJ, Kang HC, Tok ES Applied Surface Science, 420, 523, 2017 |
6 |
Atomic layer deposition of tantalum oxide thin films using the precursor tert-butylimido-tris-ethylmethylamido-tantalum and water: Process characteristics and film properties Henke T, Knaut M, Geidel M, Winkler F, Albert M, Bartha JW Thin Solid Films, 627, 94, 2017 |
7 |
Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device Xu QX, Xu G, Zhou H, Zhu H, Liu J, Wang Y, Li J, Xiang J, Liang Q, Wu H, Zhong J, Xu M, Xu W, Ma X, Wang X, Tong X, Chen D, Yan J, Zhao C, Ye T Solid-State Electronics, 115, 26, 2016 |
8 |
Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET Sharma A, Jain A, Pratap Y, Gupta RS Solid-State Electronics, 123, 26, 2016 |
9 |
Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics Zheng XH, Zhang M, Shi XH, Wang G, Zheng L, Yu YH, Huang AP, Chu PK, Gao H, Ren W, Di ZF, Wang X Advanced Functional Materials, 25(12), 1805, 2015 |
10 |
Low temperature fabrication of high performance ZnO thin film transistors with high-k dielectrics Walker B, Pradhan AK, Xiao B Solid-State Electronics, 111, 58, 2015 |