화학공학소재연구정보센터
검색결과 : 132건
No. Article
1 InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET
Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T
Journal of Crystal Growth, 510, 18, 2019
2 Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool
Tsukui M, Iyechika Y, Nago H, Takahashi H
Journal of Crystal Growth, 509, 103, 2019
3 Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface charge
Tajima J, Hikosaka T, Kuraguchi M, Nunoue S
Journal of Crystal Growth, 509, 129, 2019
4 Understanding and controlling Ga contamination in InAlN barrier layers
Mrad M, Charles M, Mazel Y, Nolot E, Kanyandekwe J, Veillerot M, Ferret P, Feuillet G
Journal of Crystal Growth, 507, 139, 2019
5 High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors
Charles M, Baines Y, Bavard A, Bouveyron R
Journal of Crystal Growth, 483, 89, 2018
6 Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD
Lumbantoruan F, Zheng XX, Huang JH, Huang RY, Mangasa F, Chang EY, Tu YY, Lee CT
Journal of Crystal Growth, 501, 7, 2018
7 Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors
Latrach S, Frayssinet E, Defrance N, Chenot S, Cordier Y, Gaquiere C, Maaref H
Current Applied Physics, 17(12), 1601, 2017
8 In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs
Gamarra P, Lacam C, Tordjman M, Medjdoub F, di Forte-Poisson MA
Journal of Crystal Growth, 464, 143, 2017
9 AlGaN HEMTs on patterned resistive/conductive SiC templates
Prystawko P, Sarzynski M, Nowakowska-Siwinska A, Crippa D, Kruszewski P, Wojtasiak W, Leszczynski M
Journal of Crystal Growth, 464, 159, 2017
10 Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNX passivation
Bai ZY, Du JF, Liu Y, Xin Q, Liu Y, Yu Q
Solid-State Electronics, 133, 31, 2017