화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Comparison study of temperature dependent direct/indirect bandgap emissions of Ge1-x-ySixSny and Ge1-ySny grown on Ge buffered Si
Wang BG, Harris TR, Hogsed MR, Yeo YK, Ryu MY, Kouvetakis J
Thin Solid Films, 673, 63, 2019
2 Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy
Jo HJ, Kim GH, Kim JS, Ryu MY, Yeo YK, Harris TR, Kouvetakis J
Current Applied Physics, 16(1), 83, 2016
3 Electrical characterization studies of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates
Harris TR, Ryu MY, Yeo YK, Beeler RT, Kouvetakis J
Current Applied Physics, 14, S123, 2014
4 Bimodal luminescence behavior of spatially-ordered seven-stacked InAs/InAlGaAs quantum dots
Oh JW, Ryu MY, Jo B, Kim JS, Harris TR, Yeo YK
Thin Solid Films, 541, 68, 2013