화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Theoretical study of the carrier effective mass in diluted III-N-V semiconductor alloys by using 10-band k.p model
Chakir K, Bilel C, Habchi MM, Rebey A, El Jani B
Thin Solid Films, 630, 25, 2017
2 Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 mu m
Guizani I, Bilel C, Habchi MM, Rebey A, El Jani B
Thin Solid Films, 630, 66, 2017
3 Investigation of the doping and Stark effects on the band structure and optical absorption of 1.55 mu m GaNAsBi/GaAs MQWs
Bilel C, Habchi MM, Ben Nasr A, Guizani I, Rebey A, El Jani B
Current Applied Physics, 16(3), 340, 2016
4 Analysis of the VIS-NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE
Habchi MM, Massoudi I, Rebey A, Ben Chaaabane R, El Jani B
Journal of Crystal Growth, 395, 26, 2014
5 Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy
Massoudi I, Habchi MM, Rebey A, El Jani B
Journal of Crystal Growth, 353(1), 77, 2012
6 Temperature effect study on structural and morphological properties of In.08Ga.92As/GaAs structures grown by MOVPE
Habchi MM, Rebey A, El Jani B
Journal of Crystal Growth, 310(24), 5259, 2008
7 Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire
Bchetnia A, Toure A, Lafford TA, Benzarti Z, Halidou I, Habchi MM, El Jani B
Journal of Crystal Growth, 308(2), 283, 2007
8 Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy
Habchi MM, Rebey A, Fouzri A, El Jani B
Applied Surface Science, 253(1), 275, 2006
9 In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE
Rebey A, Habchi MM, Bchetnia A, El Jani B
Journal of Crystal Growth, 261(4), 450, 2004