화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (001) Ge substrate
Zon, Thainoi S, Kiravittaya S, Tandaechanurat A, Nuntawong N, Sopitpan S, Yordsri V, Thanachayanont C, Kanjanachuchai S, Ratanathammaphan S, Panyakeow S
Journal of Crystal Growth, 512, 136, 2019
2 Characterization of the A1/Ge/In2Se3/Ga2S3/Al hybrid tunneling barriers designed for Gigahertz/Terahertz applications
Qasrawi AF, Omareya OA
Thin Solid Films, 660, 276, 2018
3 Morphology of self-assembled InSb/GaAs quantum dots on Ge substrate
Zon, Poempool T, Kiravittaya S, Sopitpan S, Thainoi S, Kanjanachuchai S, Ratanathammaphan S, Panyakeow S
Journal of Crystal Growth, 468, 541, 2017
4 Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate
Maeng WJ, Oh IK, Kim WH, Kim MK, Lee CW, Lansalot-Matras C, Thompson D, Chu S, Kim H
Applied Surface Science, 321, 214, 2014
5 Effect of chemical surface treatments on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 films on Ge substrates
Li XF, Li AD, Liu XJ, Gong Y, Chen XC, Li H, Wu D
Applied Surface Science, 257(10), 4589, 2011
6 High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched to Ge substrates
Takamoto T, Agui T, Ikeda E, Kurita H
Solar Energy Materials and Solar Cells, 66(1-4), 511, 2001
7 Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1-xGex/Si substrates
Sieg RM, Ringel SA, Ting SM, Samavedam SB, Currie M, Langdo T, Fitzgerald EA
Journal of Vacuum Science & Technology B, 16(3), 1471, 1998