화학공학소재연구정보센터
검색결과 : 512건
No. Article
1 Surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires
Kierdaszuk J, Tokarczyk M, Czajkowski KM, Bozek R, Krajewska A, Przewloka A, Kaszub W, Sobanska M, Zytkiewicz ZR, Kowalski G, Antosiewicz TJ, Kaminska M, Wysmolek A, Drabinska A
Applied Surface Science, 475, 559, 2019
2 Attachable freezing-delayed surfaces for ultraviolet sensing using GaN photodetector at low temperature in air
So H, Park W
Applied Surface Science, 473, 261, 2019
3 Electronic and optical properties of van der Waals heterostructures of g-GaN and transition metal dichalcogenides
Cui Z, Ren K, Zhao YM, Wang X, Shu HB, Yu J, Tang WC, Sun ML
Applied Surface Science, 492, 513, 2019
4 Investigation of nickel-63 radioisotope-powered GaN betavoltaic nuclear battery
Aydin S, Kam E
International Journal of Energy Research, 43(14), 8725, 2019
5 High molecular weight block copolymer lithography for nanofabrication of hard mask and photonic nanostructures
Rasappa S, Hulkkonen H, Schulte L, Ndoni S, Reuna J, Salminen T, Niemi T
Journal of Colloid and Interface Science, 534, 420, 2019
6 Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE
Turski H, Feduniewicz-Zmuda A, Sawicka M, Reszka A, Kowalski B, Krysko M, Wolny P, Smalc-Koziorowska J, Siekacz M, Muziol G, Nowakowski-Szukudlarek K, Grzanka S, Skierbiszewski C
Journal of Crystal Growth, 512, 208, 2019
7 High germanium doping of GaN films by ammonia molecular beam epitaxy
Fireman MN, L'Heureux G, Wu F, Mates T, Young EC, Speck JS
Journal of Crystal Growth, 508, 19, 2019
8 Physical properties of Ga-Fe-N system relevant for crystallization of GaN - Initial studies
Sadovyi B, Sadovyi P, Petrusha I, Dziecielewski I, Porowski S, Turkevich V, Nikolenko A, Tsykaniuk B, Strelchuk V, Grzegory I
Journal of Crystal Growth, 507, 77, 2019
9 Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-V
Matsumoto K, Ubukata A, Piao GX, Yano Y, Tabuchi T, Koseki S, Sodabanlu H, Watanabe K, Nakano Y, Sugiyama M
Journal of Crystal Growth, 507, 134, 2019
10 Initial stages of the epitaxial growth of AlN on GaN (111)-(2 x 2) surface: Ab-initio studies
Moreno JC, Camacho-Garcia JH, Ponce-Perez R, Sanchez-Ochoa F, De la Cruz MTR, Cocoletzi GH
Journal of Crystal Growth, 507, 370, 2019