화학공학소재연구정보센터
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No. Article
1 고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 광학적 및 전기적 특성
권혁규, 유상현, 김준현, 김창구
Korean Chemical Engineering Research, 59(2), 254, 2021
2 Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas
Kim JH, Kim CK
Korean Journal of Chemical Engineering, 37(2), 374, 2020
3 Angular dependence of SiO2 etching in plasmas containing heptafluoropropyl methyl ether
Kim JH, Park JS, Kim CK
Thin Solid Films, 669, 262, 2019
4 Angular dependences of SiO2 etch rates at different bias voltages in CF4, C2F6, and C4F8 plasmas
Kim JH, Cho SW, Park CJ, Chae H, Kim CK
Thin Solid Films, 637, 43, 2017
5 Deposition of fluorocarbon film with 1,1,1,2-tetrafluoroethane pulsed plasma polymerization
Wang YR, Ma WC, Lin JH, Lin HH, Tsai CY, Huang C
Thin Solid Films, 570, 445, 2014
6 Deposition of fluorocarbon films by Pulsed Plasma Thruster on the anode side
Zhang R, Zhang DX, Zhang F, He Z, Wu JJ
Applied Surface Science, 270, 352, 2013
7 Influence of substrate type on surface structure of polymeric perfluorocarbon in the initial stage of deposition in Ar/c-C(4)F(8) plasmas
Furuya K, Nakanishi R, Okumura H, Makita M, Harata A
Thin Solid Films, 516(18), 6028, 2008
8 Preparation of fluorocarbon thin film deposited by soft X-ray ablation and its electrical characteristics and thermal stability
Kanashima T, Maida O, Kohma N, Okumoto M, Ueno M, Kitai S, Okuyama M, Ohashi H, Tamenori Y
Applied Surface Science, 252(22), 7774, 2006
9 Growth and characterization of fluorocarbon thin films grown from trifluoromethane (CHF3) using pulsed-plasma enhanced CVD
Winder EJ, Gleason KK
Journal of Applied Polymer Science, 78(4), 842, 2000
10 Radical kinetics for polymer film deposition in fluorocarbon (C4F8, C3F6 and C5F8) plasmas
Takahashi K, Itoh A, Nakamura T, Tachibana K
Thin Solid Films, 374(2), 303, 2000