화학공학소재연구정보센터
검색결과 : 94건
No. Article
1 Theoretical study of the laser annealing process in FinFET structures
Lombardo SF, Fisicaro G, Deretzis I, La Magna A, Curver B, Lespinasse B, Huet K
Applied Surface Science, 467, 666, 2019
2 Power reduction for recovery of a FinFET by electrothermal annealing
Han JK, Park JY, Choi YK
Solid-State Electronics, 151, 6, 2019
3 Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability
Ko K, Son D, Kang M, Shin H
Solid-State Electronics, 140, 74, 2018
4 Kinetic Monte Carlo study on the evolution of silicon surface roughness under hydrogen thermal treatment
Wang G, Wang Y, Wang JZ, Pan LJ, Yu LW, Zheng YD, Shi Y
Applied Surface Science, 414, 361, 2017
5 DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
Deshpande V, Djara V, O'Connor E, Hashemi P, Balakrishnan K, Caimi D, Sousa M, Czornomaz L, Fompeyrine J
Solid-State Electronics, 128, 87, 2017
6 Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology
Boudier D, Cretu B, Simoen E, Carin R, Veloso A, Collaert N, Thean A
Solid-State Electronics, 128, 102, 2017
7 Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part II: Measurements and results
Boudier D, Cretu B, Simoen E, Carin R, Veloso A, Collaert N, Thean A
Solid-State Electronics, 128, 109, 2017
8 Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks
Xu M, Zhu HL, Zhang YB, Xu QX, Zhang YK, Qin CL, Zhang QZ, Yin HX, Xu H, Chen S, Luo J, Li CL, Zhao C, Ye TC
Solid-State Electronics, 129, 52, 2017
9 Underlapped FinFET on insulator: Quasi3D analytical model
Kumari V, Sharmetha K, Saxena M, Gupta M
Solid-State Electronics, 129, 138, 2017
10 Performance enhancement of AlGaN/GaN nanochannel omega-FinFET
Im KS, Seo JH, Vodapally S, Kang IM, Lee JH, Cristoloveanu S, Lee JH
Solid-State Electronics, 129, 196, 2017