화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
Wellmann PJ, Straubinger TL, Desperrier P, Muller R, Kunecke U, Sakwe SA, Schmitt H, Winnacker A, Blanquet E, Dedulle JM, Pons M
Materials Science Forum, 483, 25, 2005
2 High Al-doping of SiC using a modified PVT (M-PVT) growth set-up
Muller R, Kunecke U, Weingartner R, Schmitt H, Desperrier P, Wellmann P
Materials Science Forum, 483, 31, 2005
3 In-situ Er-doping of SiC bulk single crystals
Muller R, Desperrier P, Seitz C, Weisser M, Magerl A, Maier M, Winnacker A, Wellmann P
Materials Science Forum, 457-460, 723, 2004
4 Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source
Desperrier P, Muller R, Winnacker A, Wellmann PJ
Materials Science Forum, 457-460, 727, 2004