화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs
Welna M, Zelazna K, Letoublon A, Cornet C, Kudrawiec R
Solar Energy Materials and Solar Cells, 196, 131, 2019
2 MBE growth and doping of AlGaP
Tremblay R, Burin JP, Rohel T, Gauthier JP, Almosni S, Quinci T, Letoublon A, Leger Y, Le Corre A, Bertru N, Durand O, Cornet C
Journal of Crystal Growth, 466, 6, 2017
3 Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells
Almosni S, Rale P, Cornet C, Perrin M, Lombez L, Letoublon A, Tavernier K, Levallois C, Rohel T, Bertru N, Guillemoles JF, Durand O
Solar Energy Materials and Solar Cells, 147, 53, 2016
4 Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells
Ilahi S, Almosni S, Chouchane F, Perrin M, Zelazna K, Yacoubi N, Kudrawiec R, Rale P, Lombez L, Guillemoles JF, Durand O, Cornet C
Solar Energy Materials and Solar Cells, 141, 291, 2015
5 Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN
Kuyyalil J, Thanh TN, Quinci T, Almosni S, Letoublon A, Rohel T, Bertru N, Le Corre A, Durand O, Cornet C
Journal of Crystal Growth, 377, 17, 2013
6 Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates
Thanh TN, Robert C, Giudicelli E, Letoublon A, Cornet C, Ponchet A, Rohel T, Balocchi A, Micha JS, Perrin M, Loualiche S, Marie X, Bertru N, Durand O, Le Corre A
Journal of Crystal Growth, 378, 25, 2013
7 Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster
Quinci T, Kuyyalil J, Thanh TN, Wang YP, Almosni S, Letoublon A, Rohel T, Tavernier K, Chevalier N, Dehaese O, Boudet N, Berar JF, Loualiche S, Even J, Bertru N, Le Corre A, Durand O, Cornet C
Journal of Crystal Growth, 380, 157, 2013
8 Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers
Thanh TN, Robert C, Letoublon A, Cornet C, Quinci T, Giudicelli E, Almosni S, Boudet N, Ponchet A, Kuyyalil J, Danila M, Durand O, Bertru N, Le Corre A
Thin Solid Films, 541, 36, 2013
9 Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy
Bondi A, Cornet C, Boyer S, Thanh TN, Letoublon A, Pedesseau L, Durand O, Moreac A, Ponchet A, Le Corre A, Even J
Thin Solid Films, 541, 72, 2013
10 Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
Robert C, Thanh TN, Letoublon A, Perrin M, Cornet C, Levallois C, Jancu JM, Even J, Turban P, Balocchi A, Marie X, Durand O, Le Corre A
Thin Solid Films, 541, 87, 2013