화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures
Bengi S, Bulbul MM
Current Applied Physics, 13(8), 1819, 2013
2 Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes
Ozer M, Yildiz DE, Altindal S, Bulbul MM
Solid-State Electronics, 51(6), 941, 2007
3 Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures
Zeyrek S, Altindal S, Yuzer H, Bulbul MM
Applied Surface Science, 252(8), 2999, 2006
4 The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer
Dokme I, Altindal S, Bulbul MM
Applied Surface Science, 252(22), 7749, 2006