화학공학소재연구정보센터
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No. Article
1 Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers
Foronda HM, Wu F, Zollner C, Alif ME, Saifaddin B, Almogbel A, Iza M, Nakamura S, DenBaars SP, Speck JS
Journal of Crystal Growth, 483, 134, 2018
2 Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B
Islam ME, Akabori M
Journal of Crystal Growth, 463, 86, 2017
3 Investigation on the shape evolution of Cu2O crystals in the antibacterial process
Wang MF, Ni YH, Liu AM
Journal of Crystal Growth, 476, 17, 2017
4 Growth and characterisation of Ba2FeMoO6 thin films by pulsed laser deposition
Farrell IL, Hyndman AR, Reeves RJ, Williams GVM, Granville S
Thin Solid Films, 625, 24, 2017
5 Scintillation properties of Li6Y0.5Gd0.5(BO3)(3):Ce3+ single crystal
Fawad U, Rooh G, Kim HJ, Park H, Kim S, Khan S
Journal of Crystal Growth, 410, 18, 2015
6 A sample chamber for in situ high-energy X-ray studies of crystal growth at deeply buried interfaces in harsh environments
de Jong AEF, Vonk V, Honkimaki V, Gorges B, Vitoux H, Vlieg E
Journal of Crystal Growth, 420, 84, 2015
7 Effects of H-2 ambient annealing in fully 0 0 2-textured ZnO:Ga thin films grown on glass substrates using RF magnetron co-sputter deposition
Kim S, Seo J, Jang HW, Bang J, Lee W, Lee T, Myoung JM
Applied Surface Science, 255(8), 4616, 2009
8 Defining new frontiers in electronic devices with high kappa dielectrics and interfacial engineering
Hong M, Lee WC, Huang ML, Chang YC, Lin TD, Lee YJ, Kwo J, Hsu CH, Lee HY
Thin Solid Films, 515(14), 5581, 2007
9 Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy
Radhakrishnan K, Yuan K, Hong W
Journal of Crystal Growth, 261(1), 16, 2004
10 Preparation and structure characterization of nanocrystalline BaFeO4
Ni XM, Ji MR, Yang ZP, Zheng HG
Journal of Crystal Growth, 261(1), 82, 2004