화학공학소재연구정보센터
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No. Article
1 Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy
Kim YC, Son BH, Jeong HY, Park KH, Ahn YH
Current Applied Physics, 19(4), 406, 2019
2 Evidence for absence of metallic surface states in BiO2-terminated BaBiO3 thin films
Oh JS, Kim M, Kim G, Lee HG, Yoo HK, Sinn S, Chang YJ, Han M, Jozwiak C, Bostwick A, Rotenberg E, Kim HD, Noh TW
Current Applied Physics, 18(6), 658, 2018
3 Evidence for absence of metallic surface states in BiO2-terminated BaBiO3 thin films
Oh JS, Kim M, Kim G, Lee HG, Yoo HK, Sinn S, Chang YJ, Han M, Jozwiak C, Bostwick A, Rotenberg E, Kim HD, Noh TW
Current Applied Physics, 18(6), 658, 2018
4 Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
Zheng X, Feng SW, Zhang YM, Jia YP
Solid-State Electronics, 147, 35, 2018
5 Spin-polarization-induced anisotropic magnetoresistance in a two-dimensional Rashba system
Choi WY, Kim HJ, Chang J, Go G, Lee KJ, Koo HC
Current Applied Physics, 17(4), 513, 2017
6 Tailoring two-dimensional electron gas conductivity at oxide heterointerfaces
Kim TL, Jang HW
Current Applied Physics, 17(5), 626, 2017
7 Performance enhancement of AlGaN/GaN nanochannel omega-FinFET
Im KS, Seo JH, Vodapally S, Kang IM, Lee JH, Cristoloveanu S, Lee JH
Solid-State Electronics, 129, 196, 2017
8 Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
Ahmed N, Dutta AK
Solid-State Electronics, 132, 64, 2017
9 Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si
Kumar S, Remesh N, Dolmanan SB, Tripathy S, Raghavan S, Muralidharan R, Nath DN
Solid-State Electronics, 137, 117, 2017
10 Luminescence related to two-dimensional gas in ZnO/ZnMgO heterostructures
Przezdziecka E, Sajkowski JM, Stachowicz M, Kozanecki A
Thin Solid Films, 643, 31, 2017