TY - JOUR PY - 2011 J2 - Electrochem. Solid State Lett. SN - 1099-0062 T2 - Electrochemical and Solid State Letters VL - 14 IS - 5 DO - 10.1149/1.3559754 TI - Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization UR - https://www.cheric.org/research/tech/periodicals/view.php?seq=914998 AU - Zhang XG AU - Guo HX AU - Lin HY AU - Ivana AU - Gong XA AU - Zhou QA AU - Lin YR AU - Ko CH AU - Wann CH AU - Yeo YC SP - H212 EP - H214 LA - English ER -