TY - JOUR PY - 2008 J2 - Appl. Surf. Sci. SN - 0169-4332 T2 - Applied Surface Science VL - 254 IS - 19 DO - 10.1016/j.apsusc.2008.02.121 TI - Selective vapor phase etching of SiGe by HCl in a RPCVD reactor UR - https://www.cheric.org/research/tech/periodicals/view.php?seq=758297 KW - Si KW - SiGe KW - HCl KW - selective KW - etching AU - Yamamoto Y AU - Kopke K AU - Kurps R AU - Tillack B SP - 6037 EP - 6039 LA - English ER -