TY - JOUR PY - 2006 J2 - Appl. Surf. Sci. SN - 0169-4332 T2 - Applied Surface Science VL - 252 IS - 6 DO - 10.1016/j.apsusc.2005.03.226 TI - Recrystallization behavior of high-fluence N+-implanted GaAs studied by Raman spectroscopy UR - https://www.cheric.org/research/tech/periodicals/view.php?seq=642481 KW - GaNAs KW - Raman spectroscopy KW - ion implantation AU - Wang JQ AU - Mao HB AU - Zhu ZQ AU - Zhao Q AU - Li ZF AU - Lu W SP - 2186 EP - 2190 LA - English ER -