TY - JOUR PY - 2019 J2 - Solid-State Electron. SN - 0038-1101 T2 - Solid-State Electronics VL - 151 DO - 10.1016/j.sse.2018.10.015 TI - Process optimization and device variation of Mg-doped ZnO FBARs UR - https://www.cheric.org/research/tech/periodicals/view.php?seq=1716032 KW - Piezoelectric KW - FBAR KW - RF resonator KW - Bulk wave effects & devices AU - Duan FL AU - Yang Z AU - Ji ZL AU - Weng HT AU - Xie ZY AU - Shen A AU - Mi SJ AU - Chen X AU - Chen YG AU - Liu QH SP - 11 EP - 17 LA - English ER -