TY - JOUR PY - 2019 J2 - J. Cryst. Growth SN - 0022-0248 T2 - Journal of Crystal Growth VL - 506 DO - 10.1016/j.jcrysgro.2018.10.033 TI - Formation of thicker silicon wires on a sufficiently cooled substrate during the gas phase zinc reduction reaction of SiCl4 UR - https://www.cheric.org/research/tech/periodicals/view.php?seq=1704765 KW - Heat transfer KW - Radiation KW - Solidification KW - Growth from high temperature solutions KW - Semiconducting silicon AU - Shirane N AU - Inasawa S SP - 171 EP - 177 LA - Multi-Language ER -