TY - JOUR PY - 2019 J2 - J. Cryst. Growth SN - 0022-0248 T2 - Journal of Crystal Growth VL - 512 DO - 10.1016/j.jcrysgro.2019.02.035 TI - Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum UR - https://www.cheric.org/research/tech/periodicals/view.php?seq=1704589 KW - Molecular beam epitaxy (MBE) KW - Atomic layer deposition (ALD) KW - InGaAs KW - High-kappa dielectrics KW - Topological insulators (TIs) KW - Metal-oxide-semiconductor (MOS) devices AU - Lin KY AU - Wan HW AU - Chen KHM AU - Fanchiang YT AU - Chen WS AU - Lin YH AU - Cheng YT AU - Chen CC AU - Lin HY AU - Young LB AU - Cheng CP AU - Pi TW AU - Kwo J AU - Hong M SP - 223 EP - 229 LA - Multi-Language ER -