TY - JOUR PY - 2019 J2 - Curr. Appl. Phys. SN - 1567-1739 T2 - Current Applied Physics VL - 19 IS - 4 DO - 10.1016/j.cap.2019.01.017 TI - Resistive switching behavior and mechanism of room-temperature-fabricated flexible Al/TiS2-PVP/ITO/PET memory devices UR - https://www.cheric.org/research/tech/periodicals/view.php?seq=1695470 KW - Resistive switching KW - 2D materials KW - TiS2 KW - Room-temperature fabrication KW - Flexible device AU - Lyu DY AU - Hu C AU - Jiang YT AU - Bai N AU - Wang Q AU - He DY AU - Qi J AU - Li YT SP - 458 EP - 463 LA - English ER -