TY - JOUR PY - 2018 J2 - Curr. Appl. Phys. SN - 1567-1739 T2 - Current Applied Physics VL - 18 IS - 8 DO - 10.1016/j.cap.2018.04.020 TI - Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition UR - https://www.cheric.org/research/tech/periodicals/view.php?seq=1643055 KW - AlON KW - InGaAs KW - Atomic layer deposition KW - Interface trap density KW - MOS capacitor AU - Lee WC AU - Cho CJ AU - Park SI AU - Jun DH AU - Song JD AU - Hwang CS AU - Kim SK SP - 919 EP - 923 LA - English ER -