TY - JOUR PY - 2018 J2 - Solid-State Electron. SN - 0038-1101 T2 - Solid-State Electronics VL - 141 DO - 10.1016/j.sse.2017.11.005 TI - Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics UR - https://www.cheric.org/research/tech/periodicals/view.php?seq=1635830 KW - AlGaN/GaN MOSFET KW - Border traps KW - Self-terminating KW - Normally-off AU - Wang HY AU - Wang JY AU - Liu JQ AU - He YD AU - Wang MJ AU - Yu M AU - Wu WG SP - 13 EP - 17 LA - English ER -