TY - JOUR PY - 2018 J2 - Korean J. Mater. Res. SN - 1225-0562 T2 - Korean Journal of Materials Research VL - 28 IS - 4 DO - 10.3740/MRSK.2018.28.4.247 TI - 고분자 기판과 PECVD 절연막에 따른 ITZO 박막 트랜지스터의 특성 분석 TI - Characteristics of Indium Tin Zinc Oxide Thin Film Transistors with Plastic Substrates UR - https://www.cheric.org/research/tech/periodicals/view.php?seq=1610366 KW - thin film transistors(TFTs) KW - indium tin zinc oxide(ITZO) KW - polyimide(PI) KW - flexible AU - 양대규 AU - 김형도 AU - 김종헌 AU - 김현석 AU - Yang DG AU - Kim HD AU - Kim JH AU - Kim HS SP - 247 EP - 253 LA - Multi-Language ER -