TY - JOUR PY - 2015 J2 - Curr. Appl. Phys. SN - 1567-1739 T2 - Current Applied Physics VL - 15 IS - 3 DO - 10.1016/j.cap.2014.12.010 TI - Improved high-k stacks with chemical oxide interfacial layer by DPN/PNA treatment UR - https://www.cheric.org/research/tech/periodicals/view.php?seq=1307277 KW - Interfacial layer (IL) KW - High-k (HK) KW - EOT KW - DPN KW - PNA KW - Gate leakage current density (J(g)) KW - Flat-band voltage (V-fb) AU - Li S AU - Chen YT AU - Chang SJ SP - 180 EP - 182 LA - English ER -