Effect of acceptor impurity addition in low temperature growth of 3C-SiC

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Abstract

The crystallinity of 3C-SiC on Si by CVD is significantly influenced by B2H6, trimethylaluminum (TMA) and triethylgallium (TEG) addition at relatively low temperatures. These acceptor doping agents lower the epitaxial temperature and doped 3C-SiC is epitaxially grown at 1100–1150 ° C without buffer layer formation. Below 1150 ° C, TMA addition affects the growth rate and decreases the activation energy for the deposition of 3C-SiC from 34.7 kcal/mol for undoped growth to 8.7 kcal/mol for Al-doped growth.

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