Formation of copper silicides by high dose metal vapor vacuum arc ion implantation

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Abstract

Si(1 1 1) was implanted by copper ions with different doses and copper distribution in silicon matrix was obtained. The as-implanted samples were annealed at 300 and 540 °C, respectively. Formation of copper silicides in as-implanted and annealed samples were studied. Thermodynamics and kinetics of the reaction were found to be different from reaction at copper–silicon interface that was applied in conventional studies of copper–silicon interaction. The defects in silicon induced by implantation and formation of copper silicides were recognized by Si(2 2 2) X-ray diffraction (XRD).

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Acknowledgements

This work is supported by The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China.

References (16)

  • W.F. Banholzer et al.

    Surf. Sci.

    (1986)
  • T.C. Frank et al.

    J. Catal.

    (1985)
  • E.M. Shpilevsky et al.

    Surf. Coat. Tech.

    (1995)
  • D.K. Sarkar et al.

    Nucl. Inst. Meth. B

    (2000)
  • F.A. Veer et al.

    Trans. Met. Soc. AIME

    (1968)
  • M. Onishi et al.

    Trans. J. Inst. Met.

    (1977)
  • J.K. Solberg

    Acta Crystallogr.

    (1978)
  • W.J. Ward et al.

    J. Electrochem. Soc.

    (1982)
There are more references available in the full text version of this article.

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