Composition and atomic ordering of Ge/Si(001) wetting layers
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Cited by (6)
SiGe nanostructures
2009, Surface Science ReportsCitation Excerpt :As islands increase in size, they undergo a transition during which (105) facets are introduced discontinuously at the steepest point on the island (Fig. 27(b)). This first-order shape transition is expected to drive anomalously abrupt coarsening and the rapid disappearance of any nearby prepyramids [121]. The local strain distribution in an undulated Si0.7Ge0.3(001) layer was analysed in cross-section and plane view samples [63].
Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling
2016, Journal of Applied CrystallographyRole of the wetting layer for the SiGe Stranski-Krastanow island growth on planar and pit-patterned substrates
2011, Semiconductor Science and TechnologyAtomic ordering dependence on growth method in Ge:Si(001) islands: Influence of surface kinetic and thermodynamic interdiffusion mechanisms
2010, Physical Review B - Condensed Matter and Materials PhysicsCoherent X-ray diffraction imaging of strain at the nanoscale
2009, Nature Materials
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