Elsevier

Thin Solid Films

Volume 515, Issue 14, 23 May 2007, Pages 5587-5592
Thin Solid Films

Composition and atomic ordering of Ge/Si(001) wetting layers

https://doi.org/10.1016/j.tsf.2006.12.021Get rights and content

Abstract

A combination of X-ray diffraction with anomalous X-ray scattering at the Ge K edge and specular reflectivity measurements is used to reveal both composition and atomic ordering in Ge:Si wetting layers. By comparing the intensity distribution close to the (400) and (200) surface reflections we show that the Ge wetting layer is composed of a SiGe alloy which exhibits atomic ordering. Due to the Si interdiffusion the wetting layer thickness is larger than the nominal 3 ML Ge deposition. The chemical depth distribution is obtained from X-ray reflectivity measurements and confirms the enhanced Ge interdiffusion. These phenomena evidence the crucial interplay between surface kinetics and intermixing in SiGe thin films and nanostructures on Si(001) substrates.

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