DiscussionFurther to the “Reply to remarks on Discussion of three models used for the investigation of insertion/extraction processes by the potential step chronoamperometry technique [C. Montella, Electrochim. Acta 50 (2005) 3746] by H.-C. Shin, S.-I. Pyun, K.-N. Jung” [Electrochim. Acta 51 (2006) 2775]
Introduction
Recently, Montella [1] has made a discussion on three models used for analysing the chronoamperometric curves (CAs), including the cell-impedance-controlled model. Although his effort should not be underestimated, we are of the opinion that a couple of issues need to be reconsidered, as we already pointed out in the comment on his article [2]. In spite of his prompt reply to our comments [3], however, it seems to us that our model is still not being read correctly. For instance, the real feature of the intersection of the CAs is quite misunderstood in his reply. Here are our further comments on his arguments.
Section snippets
Rebuttal to the Montella's reply to our comments
As far as we understand, Montella's main objections to our comments can be summarised as follows [3]:
- (1)
The definition of the internal cell resistance is not clear in our previous articles.
- (2)
One cannot say the intersection phenomenon of the anodic and the corresponding cathodic CAs originates from the cell-impedance-controlled lithium transport, because the same intersection can be readily obtained under the simple Langmuir isotherms on the basis of his model.
As for the first objection regarding the
Experimental verification of the origin of the internal cell resistance
The useful information that helps to solve that problem whether RD is included or not in Rcell can be obtained from the analysis of the CAs measured on the film electrodes with different thicknesses. Among various internal resistances, only the diffusion resistance of the bulk electrode RD depends upon the film thickness in a linear manner [13], [14], [15], while the other internal resistances arising from the bulk electrolyte and electrolyte/electrode interface, e.g. the ohmic resistance of
Acknowledgements
The receipt of a research grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Programme, funded by Ministry of Commerce, Industry and Energy, Republic of Korea, is gratefully acknowledged. Furthermore, this work was partly supported by the Brain Korea 21 project.
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