Elsevier

Thin Solid Films

Volume 612, 1 August 2016, Pages 369-372
Thin Solid Films

Growth of (100)-highly textured BaBiO3 thin films on silicon

https://doi.org/10.1016/j.tsf.2016.06.033Get rights and content

Highlights

  • BaBiO3 thin films were grown on Si substrates and characterized.

  • Films prepared using optimized conditions are highly textured in the (100) direction.

  • The absence of in-plane texture was demonstrated by X-ray diffraction.

  • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

Abstract

We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO3 thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO2 buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO3 films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics.

References (22)

  • R.J. Cava et al.

    Superconductivity near 30 K without copper: the Ba0.6K0.4BiO3 perovskite

    Nature

    (1988)
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