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Korean Journal of Chemical Engineering, Vol.22, No.2, 298-302, 2005   Effects of Growth Variables on Structural and Optical Properties of InGaN/GaN Triangular-Shaped Quantum Wells
School of Chemical Engineering and Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
Structural and optical properties of InGaN/GaN triangular-shaped multiple quantum well (QW) structures were investigated under various conditions of growth parameters such as growth temperature, flow rate of Ga and/or In composition, and well and barrier widths. The optical properties affected by the growth parameters were well correlated with an In band gap, which is determined by the potential depth and the In composition in the well region. The emission peak energy was almost independent of the barrier width due to the relaxation of the piezoelectric fields in the triangular-shaped QWs. Photoluminescence spectra of the InGaN/GaN multiple QW structures showed a parabolic curve centered at 2.66 eV. The optical property of the triangular-shaped multiple QWs was substantially improved due to formation of quantum dot-like In composition fluctuations.
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